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October 2008
FDD3860
N-Channel PowerTrench ? MOSFET
100V, 29A, 36m ?
Features
Max r DS(on) = 36m ? at V GS = 10V, I D = 5.9A
High performance trench technology for extremely low r DS(on)
100% UIL tested
RoHS Compliant
tm
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench ? process. This part is
tailored for low r DS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
Applications
DC-AC Conversion
Synchronous Rectifier
D
D
G
D TO -2 52
S
-PA K
G
(TO -252)
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
T C = 25°C
Ratings
100
±20
29
Units
V
V
I D
-Continuous
T A = 25°C
(Note 1a)
6.2
A
-Pulsed
60
E AS
Single Pulse Avalanche Energy
(Note 3)
121
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
69
3.1
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.8
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD3860
Device
FDD3860
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
?2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
1
www.fairchildsemi.com
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